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Samsung 2GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 240-Pin Single Rank Memory

$89.36$64.99 (27% OFF)

Samsung 2GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 240-Pin Single Rank Memory

$89.36

$64.99

(27% OFF)
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Rank: Single Rank

Capacity: 2GB

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Single Rank
Single Rank
Dual Rank

+ About the product:

Brand: Samsung

Capacity: 2GB

Data Transfer Rate: DDR3-1600Mhz

Bus Type: PC3-12800

Cas: CL11

Error Correction: Non-ECC

Product Type: Memory

Samsung 2GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 240-Pin Single Rank Memory
JEDEC standard 1.5V 0.075V Power Supply VDDQ = 1.5V 0.075V 400MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin, 933MHz fCK for 1866Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 6,7,8,9,10,11,13 Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9 (DDR3-1866) Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS] Bi-directional Differential Data Strobe On Die Termination using ODT pin Average Refresh Period 7.8us at lower then TCASE 85C, 3.9us at 85C < TCASE 95C Asynchronous Reset.
- Description
JEDEC standard 1.5V 0.075V Power Supply VDDQ = 1.5V 0.075V 400MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin, 933MHz fCK for 1866Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 6,7,8,9,10,11,13 Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9 (DDR3-1866) Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS] Bi-directional Differential Data Strobe On Die Termination using ODT pin Average Refresh Period 7.8us at lower then TCASE 85C, 3.9us at 85C < TCASE 95C Asynchronous Reset.

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