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Capacity: 2GB
- About the Product:
Brand: Samsung
Capacity: 2GB
Data Transfer Rate: DDR3-1600Mhz
Bus Type: PC3-12800
Cas: CL11
Error Correction: Non-ECC
Product Type: Memory
- Description
JEDEC standard 1.5V 0.075V Power Supply
VDDQ = 1.5V 0.075V
400MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,
933MHz fCK for 1866Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 6,7,8,9,10,11,13
Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9 (DDR3-1866)
Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or
write [either On the fly using A12 or MRS]
Bi-directional Differential Data Strobe
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE 85C, 3.9us at 85C < TCASE 95C
Asynchronous Reset.
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