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Samsung 2GB, 4GB, 8GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Single Rank Memory Module

$30.25$22.00

Samsung 2GB, 4GB, 8GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Single Rank Memory Module

$30.25

$22.00

+ About the product:

Brand:Samsung

Sku: M471B5674QH0

Type: laptop Memory

Capacity: 2GB

Data Transfer Rate: 1600 Mhz

Pins: 204

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2GB 256Mx64-NEW
2GB 256Mx64-NEW
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Samsung 2GB, 4GB, 8GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Single Rank Memory Module
JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) Power Supply VDDQ = 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 5,6,7,8,9,10,11 Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333) and 8 (DDR3-1600) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower then TCASE 85?C, 3.9us at 85?C < TCASE ??95?C Asynchronous Reset
- Description
JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) Power Supply VDDQ = 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 5,6,7,8,9,10,11 Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333) and 8 (DDR3-1600) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower then TCASE 85?C, 3.9us at 85?C < TCASE ??95?C Asynchronous Reset

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